micropac industries, inc. optoelectronic products division ? 725 e. walnut st., garland, tx 75040 ? (972) 272-3571 ? fax (972) 487-6918 www.micropac.com e-mail: optosales@micropac.com 4 - 4 MC022 microcoupler, small transistor output mii optoelectronic products{private } division rev a 8/2/02 features: ? small phototransistor output ? small size saves real estate ? large thick film gold bond pads ? element evaluation on request applications: ? eliminate ground loops ? level shifting ? line receiver ? solid state switching ? switching power supplies description the MC022 microcoupler is a single channel optocoupler consisting of an led optically coupled to a light sensitive silicon phototransistor. each microcoupler is provided with full 100% dc testing (+125c test option upon request) or 100% element evaluation. all microcouplers are capable of operating over the full military temperature range. package dimensions schematic diagram a k c b e k a b e c a ll tolerances +/- .005 0.085 0.060 0.105 dimensions are in inches _____________________________________________________________________________________________ _ typical performance curves 0 5 10 15 20 25 10 20 30 40 50 60 70 80 ic (ma) vce (v) (typical, ta = 25 c) i f = 2 m a i f = 5 m a i f = 1 0 m a www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
micropac industries, inc. optoelectronic products division ? 725 e. walnut st., garland, tx 75040 ? (972) 272-3571 ? fax (972) 487-6918 www.micropac.com e-mail: optosales@micropac.com 4 - 5 MC022 microcoupler, small transistor output rev a 8/2/02 electrical characteristics t a = 25 c unless otherwise specified. parameter symbol min typ max units test conditions note input diode reverse current i r 100 a v r = 2v input-to-output internal resistance r io 10 11 ? v i n-out = 1kv 1 input-to-output capacitance c io 2.5 5 pf v cc = 5.5v, i f = 20ma input forward voltage v f 1.5 1.75 v i f = 20ma collector-emitter saturation voltage v ce(sat) 0.3 v i f = 20ma, i c = 10 a, i b = 0 collector-base breakdown voltage vbr cbo 50 v i c = 100 a, i b = 0, i f = 0 collector-emitter breakdown voltage vbr ceo 50 v i c = 1ma, i b = 0, i f = 0 emitter-base breakdown voltage vbr ebo 7 v i c = 0, i e =10 0 a, i f = 0 on state collector current i c(on) 10 25 ma i f = 10ma, v ce = 5v, i b = 0 off-state collector current i d 100 na i f = 0ma, v ce = 30v, i b = 0 rise time (phototransistor mode) t r 10 25 s i f = 5ma, v ce = 10v, r l = 100 ? fall time (phototransistor mode) t f 10 25 s i f = 5ma, v ce = 10v, r l = 100 ? note 1: these parameters are measured between all phototransisto r leads shorted together and both input diode leads shorted to gether. recommended operating conditions: parameter symbol min max units input current i f 1 50 ma supply voltage v ce 5 30 v operating temperature t a -55 125 c www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
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